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Researcher of Imam Abdulrahman Bin Faisal University
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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SDG 7 Affordable and Clean Energy
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Dive into the research topics where Hind Althib is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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Finite element study of exciton energies and optical absorption in InAs/GaAs multi-quantum dots under electric fields
Jaouane, M., Ed-Dahmouny, A., Althib, H. M., Alkhaldi, A., Arraoui, R., Fakkahi, A., Azmi, H. & Sali, A., Feb 2026, In: Micro and Nanostructures. 210, 208516.Research output: Contribution to journal › Article › peer-review
1 Link opens in a new tab Scopus citations -
Hydrostatic Pressure and Temperature Effects on Nonlinear Optical Rectification in Tetrapod Quantum Dots
Ed-Dahmouny, A., Alkhaldi, A., Jaouane, M., Althib, H. M., Arraoui, R., Fakkahi, A., Zeiri, N., Sali, A. & Duque, C. A., 2026, Lecture Notes in Nanoscale Science and Technology. Springer Nature, p. 69-85 17 p. (Lecture Notes in Nanoscale Science and Technology; vol. 45).Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review
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Optical properties of an exciton in core/shell/shell spherical quantum dot under an electric field
Jaouane, M., Ed-Dahmouny, A., Al-Shameri, N. S., Arraoui, R., Fakkahi, A., Azmi, H., Althib, H. M., El-ghazi, H., Sali, A. & Duque, C. A., Jan 2026, In: Journal of Physics and Chemistry of Solids. 208, 113169.Research output: Contribution to journal › Article › peer-review
2 Link opens in a new tab Scopus citations -
Modeling n-Type GaAs/AlGaAs Double Quantum Well Properties with Schrödinger-Poisson Equations
Jaouane, M., Ed-Dahmouny, A., Althib, H. M., Arraoui, R., Fakkahi, A., Azmi, H., El-Bakkari, K., El-Ghazi, H., Saadaoui, S. & Sali, A., Aug 2025, In: Advanced Theory and Simulations. 8, 8, 2500227.Research output: Contribution to journal › Article › peer-review
Open Access9 Link opens in a new tab Scopus citations -
Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations
Jaouane, M., Arraoui, R., Ed-Dahmouny, A., Althib, H. M., Alkhaldi, A., Fakkahi, A., Azmi, H., El-Bakkari, K., El Ghazi, H. & Sali, A., Aug 2025, In: Discover Applied Sciences. 7, 8, 863.Research output: Contribution to journal › Article › peer-review
Open Access3 Link opens in a new tab Scopus citations