Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations
- M. Jaouane
- , R. Arraoui
- , A. Ed-Dahmouny*
- , H. M. Althib
- , A. Alkhaldi
- , A. Fakkahi
- , H. Azmi
- , K. El-Bakkari
- , H. El Ghazi
- , A. Sali
*Corresponding author for this work
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