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Study of structural and magnetic properties of Sn-doped cobaltite perovskite LaCoO3: experimental and DFT approach

  • G. Murtaza
  • , M. Usman Meraj
  • , M. Hassan
  • , Muhammad Younas*
  • , Nuriyah Mohammed Aloufi
  • , Haya Alhummiany
  • , Murefah Mana Al-Anazy
  • , Abdulaziz A. Alshihri
  • , Syed Tahir Abbas Shah
  • , Q. Mahmood*
  • *Corresponding author for this work
  • Government College University Lahore
  • University of the Punjab
  • King Fahd University of Petroleum and Minerals
  • University of Jeddah
  • Princess Nourah Bint Abdulrahman University
  • King Khalid University

Research output: Contribution to journalArticlepeer-review

Abstract

The cobaltite perovskites LaCo1−xSnxO3 (x = 0.00, 0.03, 0.06, 0.09, and 0.12) were synthesized using the conventional sol–gel technique. The effect of Sn doping on the structural, magnetic, and dielectric properties of LaCoO3 has been studied. XRD and Rietveld's refinement revealed structural details of rhombohedral crystallized pure LaCoO3 compound. However, Sn doping resulted in Sn ions occupying Co sites, and resultantly, the crystal structure adopted an orthorhombic structure, which was also verified using density functional theory-based computations. The surface morphology studied using SEM revealed that Sn doping increases grain size. EDX study revealed the presence of the constituent elements (La, Co, O, and Sn). FTIR spectra showed the presence of O–Co–O bonds due to the CoO6 octahedron and confirmed the characteristic ABO3-type perovskite structure. VSM measurements at room temperature showed that increasing Sn content from x = 0.00 to 0.09, the remnant magnetization enhanced from 0.002 to 0.018 emu/g, while it declined to 0.015 emu/g at x = 0.12. The role of La and Co ions in the total magnetization and the underlying exchange mechanism was also explained using the computed results. The Sn doping in LaCoO3 resulted in improved magnetic properties, which revealed potential commercial use in data storage-related device applications.

Original languageEnglish
Article number1430
JournalJournal of Materials Science: Materials in Electronics
Volume35
Issue number20
DOIs
StatePublished - Jul 2024

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