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Tunability of spin-valley polarizations and magnetoresistance in a silicene monolayer modulated by electric and magnetic fields

  • Jinling Institute of Technology
  • University of California at Riverside

Research output: Contribution to journalArticlepeer-review

Abstract

We investigate spin–valley polarization, transmittance, and tunneling magnetoresistance (TMR) in an aperiodic structure composed of a silicene monolayer under external magnetic and electrostatic fields. These fields create an aperiodic arrangement of wells and barriers according to the Cantor sequence. By employing the transfer matrix method and the Landauer–Büttiker formalism, we first examine the effect of the electrostatic field on the electronic properties for parallel and antiparallel magnetizations and demonstrate how the magnetoresistance and spin–valley polarizations depend on the Cantor sequence order and electrostatic field intensity. We next investigate the impact of the magnetic field on these properties to understand how transmittance, polarization, and magnetoresistance can be modulated relative to an electrostatic field. Our findings provide critical mechanistic insight into spin–valley transport in silicene materials under the influence of electromagnetic fields, enabling the design of functional electronic devices.

Original languageEnglish
Article number116090
JournalMaterials and Design
Volume266
DOIs
StatePublished - Jun 2026

Keywords

  • Cantor order
  • Magnetoresistance
  • Silicene
  • Spin-valley polarization
  • Transfer-matrix method
  • Transmittance

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